Technical parameters/breakdown voltage: 3.00 V
Technical parameters/number of pins: 2
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 3 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/HTS code: 85411000506
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rectron Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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Philips | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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1N5225B
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NTE Electronics | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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1N5225B
|
ON Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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1N5225B
|
Fairchild | 类似代替 | DO-204AH |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
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1N5225B
|
Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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1N5225B
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先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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1N5225B-TAP
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
VISHAY 1N5225B-TAP 齐纳二极管, Vz:3V
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1N5225B-TAP
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VISHAY | 功能相似 | DO-35-2 |
VISHAY 1N5225B-TAP 齐纳二极管, Vz:3V
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