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Model MJW18020
Description NPNSilicon Power Transistors High Voltage Planar NPN
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Brand: ON Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3224) Minimum order quantity(1)
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Technical parameters/polarity: NPN

Technical parameters/dissipated power: 250 W

Technical parameters/gain bandwidth product: 13 MHz

Technical parameters/breakdown voltage (collector emitter): 450 V

Technical parameters/maximum allowable collector current: 30A

Technical parameters/minimum current amplification factor (hFE): 14

Technical parameters/Maximum current amplification factor (hFE): 34

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 16.26 mm

External dimensions/width: 5.3 mm

External dimensions/height: 21.08 mm

External dimensions/packaging: TO-247-3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Other/Minimum Packaging: 30

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJW18020G MJW18020G ON Semiconductor 类似代替 TO-247-3
ON SEMICONDUCTOR MJW18020G. 双极性晶体管, NPN, 450V, TO-247
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