Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N6211
|
Microsemi | 功能相似 | TO-66 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
||
JANTXV2N6211
|
Microsemi | 类似代替 | TO-66 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
||
MJ2501
|
ON Semiconductor | 功能相似 | TO-3 |
互补硅功率达林顿晶体管 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
||
MJ2501
|
Comset Semiconductors | 功能相似 |
互补硅功率达林顿晶体管 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
|||
|
|
Central Semiconductor | 功能相似 | TO-204 |
互补硅功率达林顿晶体管 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
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