Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 35.0 A
Technical parameters/output current: ≤35.0 A
Technical parameters/forward voltage: 1.19 V
Technical parameters/Maximum forward surge current (Ifsm): 500 A
Encapsulation parameters/installation method: Quick Connect
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: MODULE
External dimensions/packaging: MODULE
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
36MT100
|
Vishay Semiconductor | 功能相似 | MODULE |
Bridge Rectifier Diode, 3 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
|
36MT100
|
Ruttonsha | 功能相似 |
Bridge Rectifier Diode, 3 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
|||
|
36MT100
|
Vishay Precision Group | 功能相似 | D-63 |
Bridge Rectifier Diode, 3 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
36MT100
|
VISHAY | 功能相似 | D-63 |
Bridge Rectifier Diode, 3 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
|
36MT100
|
Vishay Intertechnology | 功能相似 |
Bridge Rectifier Diode, 3 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
|||
|
36MT120
|
LiteOn | 功能相似 | D-63 |
Bridge Rectifier Diode, 3 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
|
36MT120
|
Vishay Intertechnology | 功能相似 |
Bridge Rectifier Diode, 3 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
|||
VUO36-12NO8
|
IXYS Semiconductor | 功能相似 | FO-B-B |
IXYS SEMICONDUCTOR VUO36-12NO8 二极管 桥式整流, 三相, 1.2 kV, 35 A, 模块, 1.7 V, 5 引脚
|
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