Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60.0 W
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/maximum allowable collector current: 7A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Mospec | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
|||
BU407
|
Continental Device | 功能相似 | SFM |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
||
BU407
|
Rectron Semiconductor | 功能相似 | TO-220 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
||
BU407
|
Power Innovations | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
|||
BU407
|
Multicomp | 功能相似 | TO-220 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
||
BU407
|
Wings | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
|||
BU407LEADFREE
|
Central Semiconductor | 功能相似 | TO-220 |
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review