Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX71J
|
NXP | 类似代替 | TO-236 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
||
BCX71J
|
Siemens AG | 类似代替 | SOT-23 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
||
BCX71J
|
ON Semiconductor | 类似代替 | SOT-23-3 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
||
|
|
Philips | 功能相似 | TO-236 |
NXP BCX71J,215 单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 40 hFE
|
||
BCX71J,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BCX71J,215 单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 40 hFE
|
||
BCX71J,215
|
NXP | 功能相似 | SOT-23-3 |
NXP BCX71J,215 单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 40 hFE
|
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