Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): -500V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): -500V
Other/Collector Continuous Output Current (IC): −150mA/-0.15A
Other/Cut off Frequency fTTransmission Frequency (fT): 60MHz
Other/DC current gain hFEDC Current Gain (hFE): 80~300
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: −500mV/-0.5V
Other/dissipated power PcPoWer Dissipation: 500mW/0.5W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBHV9050T
|
NXP | 功能相似 | SOT-23 |
NXP PBHV9050T 单晶体管 双极, PNP, -500 V, 50 MHz, 300 mW, -150 mA, 160 hFE
|
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