Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 4A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSO604NS2
|
Infineon | 功能相似 | SO-8 |
的OptiMOS功率三极管 OptiMOS Power-Transistor
|
||
|
|
Vishay Siliconix | 功能相似 | SOT |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review