Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 0.45A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS1DNC45
|
ST Microelectronics | 功能相似 | SOIC-8 |
450V,0.4A,双路N沟道MOSFET
|
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