Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 10.0 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 25.0 V
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/gain: 16 dB
Technical parameters/test current: 10 mA
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J309
|
ON Semiconductor | 功能相似 | TO-226-3 |
IC SWITCH RF N-CH 25V 10mA TO-92
|
||
J309
|
Calogic | 功能相似 | TO-92 |
IC SWITCH RF N-CH 25V 10mA TO-92
|
||
J309-E3
|
Vishay Siliconix | 功能相似 | TO-92 |
JFET 25V 12mA
|
||
J309-E3
|
VISHAY | 功能相似 | TO-92 |
JFET 25V 12mA
|
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