Technical parameters/drain source resistance: 1.20 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 640 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
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