Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 300 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | TO-39 |
PNP高压硅晶体管 PNP HIGH VOLTAGE SILICON TRANSISTOR
|
||
JAN2N3743
|
Motorola | 功能相似 |
TO-39 PNP 300V 0.2A
|
|||
JAN2N3743
|
Microsemi | 功能相似 | TO-39 |
TO-39 PNP 300V 0.2A
|
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