Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 16A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
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