Technical parameters/drain source resistance: 80.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 35 W
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR014TRL
|
International Rectifier | 功能相似 |
MOSFET N-CH 60V 7.7A DPAK
|
|||
IRFR014TRL
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 60V 7.7A DPAK
|
|||
IRFR014TRL
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014TRL
|
VISHAY | 功能相似 | TO-252 |
MOSFET N-CH 60V 7.7A DPAK
|
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