Technical parameters/forward voltage: 1.3 V
Technical parameters/reverse recovery time: 35 ns
Technical parameters/Maximum reverse voltage (Vrrm): 300V
Technical parameters/forward current: 3 A
Technical parameters/maximum reverse leakage current (Ir): 10uA
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/packaging: DO-214AB
Other/Product Lifecycle: Active
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ES3F
|
Multicomp | 类似代替 | DO-214AB |
3A 至 4A,Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
ES3F
|
Good-Ark Electronics | 类似代替 | DO-214AB |
3A 至 4A,Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
ES3F
|
GE | 类似代替 |
3A 至 4A,Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
|||
ES3G
|
SEP | 类似代替 | SMC-2 |
MULTICOMP ES3G 快速/超快二极管, 单, 400 V, 3 A, 1.3 V, 35 ns, 100 A
|
||
ES3G
|
Taiwan Semiconductor | 类似代替 | DO-214AB-2 |
MULTICOMP ES3G 快速/超快二极管, 单, 400 V, 3 A, 1.3 V, 35 ns, 100 A
|
||
ES3G
|
Diotec Semiconductor | 类似代替 | DO-214AB |
MULTICOMP ES3G 快速/超快二极管, 单, 400 V, 3 A, 1.3 V, 35 ns, 100 A
|
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