Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 60
Technical parameters/Maximum current amplification factor (hFE): 60 @5mA, 10V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-88-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-88-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5111T1
|
Leshan Radio | 功能相似 | SC-70-3 |
Bias Resistor Transistor
|
||
MUN5112DW1T1
|
ON Semiconductor | 功能相似 | SC-88-6 |
Dual Bias Resistor Transistors
|
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