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Model 2N6770
Description Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
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Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2520) Minimum order quantity(1)
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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6770 2N6770 TT Electronics Resistors 功能相似
Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
PDF
2N6770 2N6770 Microchip 功能相似 TO-204-2
Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
PDF
2N6770 2N6770 Microsemi 功能相似 TO-204-2
Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
PDF
2N6770E3 2N6770E3 Microsemi 功能相似
N-CH 500V 12A
IRF450PBF IRF450PBF Infineon 功能相似 TO-3
TO-3 N-CH 500V 12A
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