Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1000 mW
Technical parameters/gain bandwidth product: 175 MHz
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Blue Rocket Electronics | 功能相似 | TO-92LM |
NPN Silicon Plastic-Encapsulate Transistor
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2SC2383-O
|
Micro Commercial Components | 功能相似 | TO-92 |
NPN Silicon Plastic-Encapsulate Transistor
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|
Micro Commercial Components | 功能相似 | TO-92 |
NPN Silicon Plastic-Encapsulate Transistor
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BC550B
|
GC Electronics | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
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|
U | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC550B
|
National Semiconductor | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC550B
|
Fairchild | 功能相似 | TO-226-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC550B
|
ON Semiconductor | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC550B
|
Infineon | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
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