Technical parameters/dissipated power: 1500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
External dimensions/height: 9.05 mm
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC1971
|
Mitsubishi | 功能相似 | SFM |
NPN外延平面型(对VHF频段的移动无线电应用的RF功率放大器) NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
||
2SC1971
|
Advanced Semiconductor | 功能相似 | TO-220 |
NPN外延平面型(对VHF频段的移动无线电应用的RF功率放大器) NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
||
|
|
Advanced Semiconductor | 功能相似 | TO-220 |
RF Power Bipolar Transistor, 1Element, Very High Frequency Band, Silicon, NPN, TO-220AB, TO-220, 3Pin
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review