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Model NTE342
Description Trans RF BJT NPN 17V 2A 3Pin(3+Tab)
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Packaging
Delivery time
Packaging method
Standard packaging quantity 1
106.28  yuan 106.28yuan
1+:
$ 122.2232
10+:
$ 119.0347
50+:
$ 116.5903
100+:
$ 115.7400
200+:
$ 115.1023
500+:
$ 114.2521
1000+:
$ 113.7207
2000+:
$ 113.1893
Quantity
1+
10+
50+
100+
200+
Price
$122.2232
$119.0347
$116.5903
$115.7400
$115.1023
Price $ 122.2232 $ 119.0347 $ 116.5903 $ 115.7400 $ 115.1023
Start batch production 1+ 10+ 50+ 100+ 200+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1675) Minimum order quantity(1)
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Technical parameters/dissipated power: 1500 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1500 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

External dimensions/height: 9.05 mm

Physical parameters/materials: Silicon

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Customs information/ECCN code: EAR99

Customs information/HTS code: 85412900951

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SC1971 2SC1971 Mitsubishi 功能相似 SFM
NPN外延平面型(对VHF频段的移动无线电应用的RF功率放大器) NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SC1971 2SC1971 Advanced Semiconductor 功能相似 TO-220
NPN外延平面型(对VHF频段的移动无线电应用的RF功率放大器) NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
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RF Power Bipolar Transistor, 1Element, Very High Frequency Band, Silicon, NPN, TO-220AB, TO-220, 3Pin

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