Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 10A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP10NB20
|
ST Microelectronics | 功能相似 | TO-220 |
N - 沟道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
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