Technical parameters/dissipated power: 786000 mW
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: M259
External dimensions/packaging: M259
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
78303
|
NXP | 功能相似 |
TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
|
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