Technical parameters/drain source resistance: 6.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.60 W
Technical parameters/leakage source breakdown voltage: 240 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 360 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD5N20LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD5N20LT4 晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
|
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