Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 10 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Siemens Semiconductor | 功能相似 |
JAN 系列 10 V 200 mA 400 mW 通孔 硅 齐纳 二极管 - DO-35
|
|||
|
|
Motorola | 功能相似 |
JAN 系列 10 V 200 mA 400 mW 通孔 硅 齐纳 二极管 - DO-35
|
|||
JAN1N758A-1
|
Microsemi | 功能相似 | DO-35 |
JAN 系列 10 V 200 mA 400 mW 通孔 硅 齐纳 二极管 - DO-35
|
||
|
|
Motorola | 功能相似 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
JANTXV1N758A-1
|
M/A-Com | 功能相似 | DO-204AH |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
JANTXV1N758A-1
|
Aeroflex | 功能相似 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
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