Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 399 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 83 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 550 V
Technical parameters/Continuous drain current (Ids): 9.00 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 890pF @100V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 83000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.65 mm
External dimensions/width: 4.85 mm
External dimensions/height: 16.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPP50R399CP
|
Infineon | 类似代替 | TO-220-3 |
Infineon CoolMOS™CP 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
IPP50R399CPXKSA1
|
Infineon | 类似代替 | TO-220-3 |
Infineon CoolMOS™CP 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
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