Technical parameters/forward voltage: 1.1 V
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 1 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-213AB
External dimensions/packaging: DO-213AB
Other/Minimum Packaging: 7500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYG10D-E3/TR
|
Vishay Semiconductor | 类似代替 | DO-214AC |
VISHAY BYG10D-E3/TR 标准恢复二极管, 雪崩, 单, 200 V, 1.5 A, 1.15 V, 4 µs, 30 A
|
||
BYG10DHE3/TR
|
VISHAY | 类似代替 | TO-220-2 |
整流器 200 Volt 1.5 Amp Glass Passivated
|
||
BYG10DHE3/TR
|
Vishay Semiconductor | 类似代替 | DO-214AC |
整流器 200 Volt 1.5 Amp Glass Passivated
|
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