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Model RF1K4921196
Description Transistor | MOSFET | N-channel | 12 V V（ BR ） DSS | 7A I（ D） | SO TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 7A I(D) | SO
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Brand: Fairchild
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5214) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 2 W

Technical parameters/drain source voltage (Vds): 12 V

Technical parameters/Continuous drain current (Ids): 7A

Technical parameters/rise time: 150 ns

Technical parameters/descent time: 160 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SO-8

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RF1K49211 RF1K49211 Harris 功能相似 SOIC-8
7A ， 12V ， 0.020欧姆，逻辑电平，单N沟道LittleFET⑩功率MOSFET 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET

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