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Model BSS139L6327
Description SOT-23 N-CH 250V 0.1A
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Brand: Infineon
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5473) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 250 V

Technical parameters/Continuous drain current (Ids): 0.1A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSS139 BSS139 Infineon 功能相似 SOT-23-3
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
PDF
BSS139 BSS139 Siemens AG 功能相似 SOT-23
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
PDF
BSS139H6327 BSS139H6327 Infineon 类似代替 SOT-23-3
INFINEON BSS139H6327 晶体管, MOSFET, N沟道, 100 mA, 250 V, 7.8 ohm, 10 V, 1.4 V
PDF

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