Encapsulation parameters/Encapsulation: 1008
External dimensions/packaging: 1008
Other/maximum source drain voltage VdsDrain Source Voltage: -3V
Other/Gate Source Breakdown Voltage V (BR) GSGate Source Voltage: -4V
Other/drain current (Vgs=0V) IDSSDrain Current: 15mA-60mA
Other/Off Voltage Vgs (off) Gate Source Cut off Voltage: -0.1V -- -1.5V
Other/dissipative power PdPower Dissipation: 50mW
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MGF4919G
|
Mitsubishi | 功能相似 |
超低噪音的InGaAs HEMT SUPER LOW NOISE InGaAs HEMT
|
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