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Model BSP88 L6327
Description INFINEON BSP88 L6327 Transistor, MOSFET, N-channel, 350 mA, 240 V, 4 ohm, 10 V, 1 V
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Brand: Infineon
Packaging SOT-223-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2024) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 240 V

Technical parameters/rated current: 350 mA

Technical parameters/number of pins: 4

Technical parameters/drain source resistance: 4 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.8 W

Technical parameters/threshold voltage: 1 V

Technical parameters/input capacitance: 95.0 pF

Technical parameters/gate charge: 6.80 nC

Technical parameters/drain source voltage (Vds): 240 V

Technical parameters/Continuous drain current (Ids): 350 mA

Technical parameters/rise time: 3.5 ns

Technical parameters/Input capacitance (Ciss): 95pF @25V(Vds)

Technical parameters/rated power (Max): 1.8 W

Technical parameters/descent time: 18.9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1800 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-223-3

External dimensions/packaging: SOT-223-3

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSP88H6327XTSA1 BSP88H6327XTSA1 Infineon 功能相似 SOT-223-4
INFINEON BSP88H6327XTSA1 晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
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