Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Ammo Pack
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3310R
|
Fairchild | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
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