Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: PDIP
External dimensions/packaging: PDIP
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC1413BDR2G
|
ON Semiconductor | 功能相似 | SOIC-16 |
ON SEMICONDUCTOR MC1413BDR2G 晶体管阵列
|
||
MC1413PG
|
ON Semiconductor | 功能相似 | PDIP-16 |
ON SEMICONDUCTOR MC1413PG 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
||
ULN2003A
|
ON Semiconductor | 功能相似 | SOIC |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
||
|
|
Allegro MicroSystems | 功能相似 | DIP |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
||
ULN2003A
|
Major Brands | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
|||
ULN2003A
|
SGS THOMSON | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
|||
ULN2003A
|
Toshiba | 功能相似 | PDIP-16 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
||
ULN2003A
|
ETC1 | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
|||
ULN2003A
|
Motorola | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
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