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Model NTE123
Description NTE ELECTRONICS NTE123 Bipolar transistor, NPN, 40V, TO-39
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Brand: NTE Electronics
Packaging TO-39
Delivery time
Packaging method
Standard packaging quantity 1
13.33  yuan 13.33yuan
5+:
$ 15.5938
50+:
$ 14.9274
200+:
$ 14.5542
500+:
$ 14.4609
1000+:
$ 14.3676
2500+:
$ 14.2610
5000+:
$ 14.1943
7500+:
$ 14.1277
Quantity
5+
50+
200+
500+
1000+
Price
$15.5938
$14.9274
$14.5542
$14.4609
$14.3676
Price $ 15.5938 $ 14.9274 $ 14.5542 $ 14.4609 $ 14.3676
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5006) Minimum order quantity(5)
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Technical parameters/frequency: 300 MHz

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 800 mW

Technical parameters/collector breakdown voltage: 75.0 V (min)

Technical parameters/breakdown voltage (collector emitter): 40.0V (min)

Technical parameters/maximum allowable collector current: 0.8A

Technical parameters/DC current gain (hFE): 35

Technical parameters/operating temperature (Max): 200 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 800 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-39

External dimensions/packaging: TO-39

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 200℃

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2014/12/17

Customs information/ECCN code: EAR99

Customs information/HTS code: 85412100959

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NSS30101LT1G NSS30101LT1G ON Semiconductor 功能相似 SOT-23-3
ON SEMICONDUCTOR NSS30101LT1G 单晶体管 双极, NPN, 30 V, 100 MHz, 710 mW, 1 A, 200 hFE
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