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Model TPV8100B
Description RF Power Bipolar Transistor, 2Element, Ultra High Frequency Band, Silicon, NPN, 0.438 X 0.45INCH, FM-4
Product QR code
Brand: Advanced Semiconductor
Packaging Case 398-03
Delivery time
Packaging method Tray
Standard packaging quantity 1
1070.08  yuan 1070.08yuan
1+:
$ 1177.0880
10+:
$ 1166.3872
25+:
$ 1161.0368
50+:
$ 1155.6864
100+:
$ 1150.3360
150+:
$ 1144.9856
250+:
$ 1139.6352
500+:
$ 1134.2848
Quantity
1+
10+
25+
50+
100+
Price
$1177.0880
$1166.3872
$1161.0368
$1155.6864
$1150.3360
Price $ 1177.0880 $ 1166.3872 $ 1161.0368 $ 1155.6864 $ 1150.3360
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7003) Minimum order quantity(1)
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Technical parameters/dissipated power: 215 W

Technical parameters/minimum current amplification factor (hFE): 30

Technical parameters/operating temperature (Max): 200 ℃

Technical parameters/operating temperature (Min): 65 ℃

Encapsulation parameters/Encapsulation: Case 398-03

External dimensions/packaging: Case 398-03

Other/Product Lifecycle: Active

Other/Packaging Methods: Tray

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SD1492 SD1492 Advanced Semiconductor 功能相似
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4
PDF
SD4100 SD4100 Advanced Semiconductor 功能相似
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4
PDF
TPV8100B TPV8100B Advanced Semiconductor 功能相似 Case 398-03
RF Power Bipolar Transistor, 2Element, Ultra High Frequency Band, Silicon, NPN, 0.438 X 0.45INCH, FM-4
PDF

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