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Model STB9NB50
Description N - Channel Enhancement Mode Power MESH MOSFET
Product QR code
Brand: ST Microelectronics
Packaging D2PAK
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4624) Minimum order quantity(1)
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Technical parameters/drain source resistance: 850 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 125 W

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/leakage source breakdown voltage: 500 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 8.60 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: D2PAK

External dimensions/packaging: D2PAK

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

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