Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 3A
Encapsulation parameters/Encapsulation: SCT-595
External dimensions/packaging: SCT-595
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP72M
|
Siemens Semiconductor | 功能相似 |
PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
|
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