Technical parameters/clamp voltage: 58.1 V
Technical parameters/peak pulse power: 1000 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMF36A-E3-08
|
VISHAY | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 36V V(RWM), Unidirectional, 1Element, Silicon, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2Pin
|
||
SMF36A-GS08
|
Vishay Semiconductor | 类似代替 | SMD |
VISHAY SMF36A-GS08 静电保护装置, TVS, 58.1 V, SMD, 2 引脚
|
||
|
|
Vishay Intertechnology | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB, SMF, 2 PIN
|
||
SMF36A-HE3-18
|
Vishay Semiconductor | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB, SMF, 2 PIN
|
||
SMF36A-HE3-18
|
VISHAY | 功能相似 | DO-219AB |
Trans Voltage Suppressor Diode, 1000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB, SMF, 2 PIN
|
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