Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 20A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SJ504
|
Renesas Electronics | 类似代替 | TO-220 |
硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
|
||
2SJ504-E
|
Renesas Electronics | 类似代替 | TO-220 |
硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
|
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