Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 3.8A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD10N20
|
Fairchild | 功能相似 | DPAK |
200V N沟道MOSFET 200V N-Channel MOSFET
|
||
PHD9NQ20T
|
NXP | 功能相似 | DPAK |
N-channel TrenchMOS™ transistor
|
||
|
|
Philips | 功能相似 |
N-channel TrenchMOS™ transistor
|
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