Technical parameters/frequency: 1215 MHz
Technical parameters/dissipated power: 583 W
Technical parameters/output power: 150 W
Technical parameters/breakdown voltage (collector emitter): 70 V
Technical parameters/gain: 9.8 dB
Technical parameters/minimum current amplification factor (hFE): 10 @5A, 5V
Technical parameters/rated power (Max): 150 W
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 332A-03
External dimensions/packaging: 332A-03
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AVD075P
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN, 0.28INCH, PILL PACKAGE-4
|
|||
MRF1150MB
|
M/A-Com | 功能相似 | 332A-03 |
RF Power Bipolar Transistor, L Band, Silicon, NPN, 0.28INCH, PILL, 4Pin
|
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