Technical parameters/dissipated power: 1000 mW
Technical parameters/access time: 70.0 ns
Technical parameters/memory capacity: 64000 B
Technical parameters/access time (Max): 70 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1000 mW
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: SO-28
External dimensions/packaging: SO-28
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
M48T59Y-70MH1
|
ST Microelectronics | 功能相似 | SOIC |
64 Kbit的是8K ×8 TIMEKEEPER SRAM 64 Kbit 8Kb x8 TIMEKEEPER SRAM
|
||
M48T59Y-70MH1E
|
ST Microelectronics | 功能相似 | SOIC-28 |
5.0或3.3 V ， 64千位（ 8千位×8 ） TIMEKEEPER® SRAM 5.0 or 3.3 V, 64 Kbit (8 Kbit x 8) TIMEKEEPER® SRAM
|
||
M48T59Y-70MH1F
|
ST Microelectronics | 完全替代 | SOP-28 |
5.0或3.3 V ， 64千位（ 8千位×8 ） TIMEKEEPER® SRAM 5.0 or 3.3 V, 64 Kbit (8 Kbit x 8) TIMEKEEPER® SRAM
|
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