Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/maximum source drain voltage VdsDrain Source Voltage: -30V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 20V
Other/Maximum Drain Current IdDrain Current: -200mA/-0.2A
Other/source drain on resistance RdsDrain Source On State Resistance: 6Ω @-1A,-10V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: -1.4--2.4V
Other/dissipative power PdPower Dissipation: 200mW/0.2W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SJ204-A
|
Renesas Electronics | 功能相似 | SC-59 |
Trans MOSFET P-CH 30V 0.2A 3Pin SC-59
|
||
J204
|
Renesas Electronics | 功能相似 | SC-59 |
2SJ204-T1B-A
|
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