Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 800mA
Technical parameters/minimum current amplification factor (hFE): 80
Technical parameters/Maximum current amplification factor (hFE): 240
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1201
|
Toshiba | 功能相似 | SOT-89 |
Sot-89 Plastic-encapsulate Biploar Transistors
|
||
2SA1201
|
UTC | 功能相似 | SOT-89 |
Sot-89 Plastic-encapsulate Biploar Transistors
|
||
2SA1201
|
CJ | 功能相似 | SOT-89-3 |
Sot-89 Plastic-encapsulate Biploar Transistors
|
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