Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 131 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/rise time: 55 ns
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1S50N06SM
|
Fairchild | 功能相似 | TO-263 |
50A , 60V , 0.022 Ohm的N通道功率MOSFET 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
|
||
RF1S50N06SM9A
|
Fairchild | 功能相似 | TO-263-3 |
N沟道 60V 50A
|
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