Technical parameters/drain source resistance: 38 mΩ
Technical parameters/polarity: Dual P
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: -1.3V
Technical parameters/drain source voltage (Vds): -20V
Technical parameters/Continuous drain current (Ids): -5A
Encapsulation parameters/Encapsulation: SOT-28
External dimensions/packaging: SOT-28
Other/Product Lifecycle: Active
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ECH8654
|
ON Semiconductor | 功能相似 | SOT-28 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
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