Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 188 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 7300pF @25V(Vds)
Technical parameters/rated power (Max): 188 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 188W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.4 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB80N04S2-04
|
Infineon | 类似代替 | TO-263-3 |
OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor
|
||
IPB80N04S303ATMA1
|
Infineon | 功能相似 | TO-263-3-2 |
D2PAK N-CH 40V 80A
|
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