Technical parameters/rated voltage (DC): 4.30 V
Technical parameters/rated power: 225 mW
Technical parameters/dissipated power: 300 mW
Technical parameters/voltage regulation value: 4.3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX84-C4V3
|
NXP | 类似代替 | SOT-23 |
齐纳二极管 250mW，BZX84 系列，NXP Semiconductors ### 齐纳二极管，Nexperia
|
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|
|
Bruckewell Technology | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX84C4V3 单管二极管 齐纳, 4.3 V, 350 mW, TO-236AB, 5 %, 3 引脚, 150 °C
|
|||
BZX84C4V3
|
ON Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C4V3 单管二极管 齐纳, 4.3 V, 350 mW, TO-236AB, 5 %, 3 引脚, 150 °C
|
||
BZX84C4V3
|
Micro Commercial Components | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX84C4V3 单管二极管 齐纳, 4.3 V, 350 mW, TO-236AB, 5 %, 3 引脚, 150 °C
|
|||
BZX84C4V3
|
Diodes | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C4V3 单管二极管 齐纳, 4.3 V, 350 mW, TO-236AB, 5 %, 3 引脚, 150 °C
|
||
|
BZX84C4V3
|
Central Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX84C4V3 单管二极管 齐纳, 4.3 V, 350 mW, TO-236AB, 5 %, 3 引脚, 150 °C
|
||
BZX84C4V3LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BZX84C4V3LT1G 单管二极管 齐纳, 4.3 V, 225 mW, SOT-23, 7 %, 3 引脚, 150 °C
|
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