Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/Encapsulation: NS-B1
External dimensions/packaging: NS-B1
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC3901
|
Sanyo Semiconductor | 功能相似 |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS
|
|||
DTC143TSA
|
Taiwan Semiconductor | 功能相似 |
数字晶体管(内置电阻) Digital transistors (built-in resistor)
|
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