Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Reverse Voltage VrReverse Voltage: 4V
Other/Average Rectified Current IoAVerage Rectified Current: 130mA/0.13A
Other/maximum forward voltage drop VFForward Voltage (Vf): 425mV/0.425V
Other/Maximum dissipated power PdPower dissipation: 150MW/0.15W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAT17-06
|
Siemens Semiconductor | 功能相似 | SOT-23 |
硅肖特基二极管 Silicon Schottky Diode
|
||
BAT17-06
|
Infineon | 功能相似 | SOT-23 |
硅肖特基二极管 Silicon Schottky Diode
|
||
HSMS-2823
|
AVAGO Technologies | 功能相似 |
SILICON, MIXER DIODE, SOT-23, 3Pin
|
|||
HSMS-2823-TR1G
|
AVAGO Technologies | 功能相似 | SOT-23-3 |
RF DIODE, SCHOTTKY, 1pF 15V, SOT-23
|
||
HSMS-2823-TR1G
|
Broadcom | 功能相似 | SOT-23-3 |
RF DIODE, SCHOTTKY, 1pF 15V, SOT-23
|
||
HSMS-2823-TR2G
|
Broadcom | 功能相似 | SOT-23-3 |
肖特基二极管与整流器 15 VBR 1 pF
|
||
HSMS-2823-TR2G
|
AVAGO Technologies | 功能相似 | SOT-23 |
肖特基二极管与整流器 15 VBR 1 pF
|
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