Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -6.80 A
Technical parameters/drain source resistance: 480 mΩ (max)
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 48.0 W
Technical parameters/product series: IRF9520N
Technical parameters/drain source voltage (Vds): -100 V
Technical parameters/leakage source breakdown voltage: -100 V
Technical parameters/Continuous drain current (Ids): -6.80 A
Technical parameters/rise time: 47.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9520PBF
|
VISHAY | 功能相似 | TO-220-3 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRF9520PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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