Technical parameters/frequency: 225 MHz
Technical parameters/rated current: 26 A
Technical parameters/dissipated power: 400000 mW
Technical parameters/output power: 200 W
Technical parameters/gain: 14 dB
Technical parameters/test current: 100 mA
Technical parameters/Input capacitance (Ciss): 180pF @28V(Vds)
Technical parameters/dissipated power (Max): 400000 mW
Technical parameters/rated voltage: 65 V
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 375-04
External dimensions/packaging: 375-04
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF248
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MRF141G
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M/A-Com | 功能相似 | 375-04 |
FET RF 2N CH 28V 300W 375-04
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MRF175GV
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M/A-Com | 功能相似 | 375-04 |
N沟道MOS宽带射频功率FET N-CHANNEL MOS BROADBAND RF POWER FETs
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